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| BYP 301 FRED Diode * Fast recovery epitaxial diode * Soft recovery characteristics Type BYP 301 VRRM 1200V IFRMS 20A trr 80ns Package TO-218 AD Ordering Code C67047-A2251-A2 Maximum Ratings Parameter Mean forward current Symbol Values 12 Unit A 20 50 IFAV IFRMS IFSM IFRM 110 i2dt 13 TC = 90 C, D = 0.5 RMS forward current Surge forward current, sine halfwave, aperiodic Tj = 100 C, f = 50 Hz Repetitive peak forward current Tj = 100 C, tp 10 s i 2t value Tj = 100 C, tp = 10 ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation A2s 1200 1200 W 40 -40 ... + 150 -40 ... + 150 1.5 46 E 40 / 150 / 56 K/W C V VRRM VRSM Ptot Tj Tstg RthJC RthJA - TC = 90 C Chip or operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip-ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group 1 12.96 BYP 301 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Forward voltage drop Values typ. max. Unit VF 2.2 1.8 0.01 0.05 0.15 2.75 - V IF = 12 A, Tj = 25 C IF = 12 A, Tj = 100 C Reverse current IR 0.25 - mA VR = 1200 V, Tj = 25 C VR = 1200 V, Tj = 100 C VR = 1200 V, Tj = 150 C AC Characteristics Reverse recovery charge Qrr 2.2 - C IF = 12 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Peak reverse recovery current IRRM 35 - A IF = 12 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Reverse recovery time trr 80 - ns IF = 12 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Storage time tS 45 0.8 - IF = 12 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Softfaktor S IF = 12 A, VCC = 500 V, diF/dt = -1000 A/s Tj = 100 C Semiconductor Group 2 12.96 BYP 301 Typ. forward characteristics Typ. reverse current IF = f (VF) parameter: Tj 10 2 IRRM = f (diF / dt) parameter: VCC = 500 V,IF = 12 A, Tj = 100 C 50 A A 25C IF 10 1 Tj=100C IRRM 40 35 30 25 20 10 0 15 10 5 10 -1 0 1 2 3 4 5 6 V VF 8 0 1 10 10 2 10 3 A/us diF/dt Typ. reverse recovery charge Qrr = f (diF / dt) parameter: VCC = 500 V,IF = 12 A, Tj = 100 C 3.0 uC 2.6 Qrr 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 1 10 10 2 10 3 A/us diF/dt Semiconductor Group 3 12.96 |
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